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Name and Affiliation
Seiichi MIYAZAKI
miyazaki@sxsys.hiroshima-u.ac.jp

Professor
Graduate School of Advanced Sciences of Matter
Hiroshima University
Kagamiyama 1-3-1
Education and Professional Background
[Education]
1981 B.S. Electrical Engineering, Hiroshima University
1983 M.A. Electrical Engineering, Hiroshima University
1986 Ph.D. Electrical Engineering, Hiroshima University
[Professional Experience]
1986- 1992 Research Associate of Electrical Engineering, Hiroshima Univ
1994-1995 Visiting Researcher, Universitate Erlangen-Nuernberg, Erlangen, Germany
2002-present Professor in Graduate School of Advanced Sciences of Matter, Hiroshima Univ
Academic Societies Surface Science Society of Japan, 2002-
Institute of Electronics, Information and Communication Engineering, 1999-
Materials Research Society, 1992-
Japan Society of Applied Physics, 1986-
Awards 1987.2, Young Researcher Award from Inoue Foundation
2003.4, JJAP Editorial Contribution Award
Editors/Editorial Compliers *Jpn. J. Appl. Phys.: Assoc. Editor (1998-2002)
*Jpn. J. Appl. Phys. 40, 4B (2001): Special Issue for 2000 Int. Conf. on Solid State Devices and Materials, ・Editorial Committee Chairperson.
*E-journal of Surf. Sci. and Nanotechnol. (2003- ) Editorial Board Member
*EICE Trans. （Jan. 2004）: Special Issue on High-k Gate Dielectrics, Guest Editor

COMMITTEE MEMBER OF INTERN. CONF. held in 2004
*Int. Conf. on Solid State Devices and Materials (1997- ) Program Committee Member
*Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (2000- ) Program Committee Member
*Int. Workshop on Dielectric Thin Film (1999- ) Program Committee Member, Vice Program Chairman (1999, 2004)
*Silicon Nanoelectronics Workshop (1999- ) Program Committee Member
* Int. Microprocess and Nanotechnology Conf. (2004) Program Committee Member
Important Publications
1. S. Miyazaki, M. Narasaki, A. Suyma, M. Yamaoka, H. Murakami, Electronic Strucutre and Energy Band Offsets for Ultrathin Silicon Nitride on Si(100)ﾓ, Appl. Surf. Sci. 216 (2003) 252-257.
2.  M. Yamaoka, H. Murakami and S. Miyazaki, ﾒDiffusion and Incorporation of Zr into thermally Grown SiO2 on Si(100), Appl. Surf. Sci. 216 (2003) 223-227.
3. S. Miyazaki, M. Narasaki, M. Ogasaawra and M. Hirose, ﾒChemical and Electronic Structure of Ultrathin Zirconium Oxide Films on Silicon as Determined by Photoelectron Spectroscopyﾓ, Solid-State Electronics 46 (2002) 1679-1685.
4. S. Miyazaki, ﾒCharacterization of High-k Gate Dielectric/Silicon Interfacesﾓ, Appl. Surf. Sci. 190 (2002) 66-74; Invited at 8th Int. Conf. on the Formation of Semicond. Interfaces (Sapporo, 2001) Th3-4.
5. W. Mizubayashi, Y. Yoshida, S. Miyazaki and M. Hirose, ﾒQuantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxidesﾓ, Jpn. J. Appl. Phys. (2002) 246-2430.
6. S. Miyazaki, ﾒPhotoemission Technical Meeting of Energy-band Alignments and Gap-states Density Distributions for high-k Gate Dielectricsﾓ, J. Vac. Sci. Technol. B19 (2001) 2212-2216; Invited at 28th Conf. on the Phys. and Chem. of Semicond. Interfaces (Lake Buena Vista, 2001)We1620.
7. M. Koh, W. Mizubayashi, K. Iwamoto, H. Murakami, T. Ono, M. Tsuno, T. Miyara, K. Shibahara, S. Miyazaki and M. Hirose, ﾒLimit of Gate Oxide Thickness Scaling in MOSFETs due to Apparent Threshold Voltage Fluctuation Induced by Tunnel Leakage Currentﾓ, IEEE Trans. on Electron Devices (2001) 259-264.
8. S. Miyazaki, K. Morino, M. Hirose, ﾒInfluence of Boron and Fluorine Incorporation on the Network Strucuture of Ultrathin SiO2ﾓ, Solid State Phenomena 76-77 (2001) 149-152.
9. Khairurrijal, W. Mizubayashi, S. Miyazaki and M. Hirose, ﾒAnalytic Model of Direct Tunnel Current Through Ultrathin Gate Oxidesﾓ, J. Appl. Phys. 87 (2000) 3000-3005.
10. S. Miyazaki, T. Tamura, Ogasawara M, Itokawa H, Murakami H, Hirose M, ﾒInfluence of Nitrogen Incorporation in Uultrathin SiO2 on the Structure and Electronic States of the SiO2/Si(100) Interface, Appl. Surf. Sci. 159-160 (2000) 75-82.
Ten papers selected from the recent publications on FORMATION OF SI QUANTUM DOTS AND ITS APPLICATION TO THE FLOATING GAT IN MOS DEVICES
1. Y. Darma, H. Murakami and S. Miyazaki, ﾓFormation of Nanometer Silicon Dots with Germanium Core by Highly-Slective Low-Pressure Chemical Vapor Depositionﾓ, Jpn. J. Appl. Phys. 42 (2003) 4129-4133.
2.  M. Ikeda, Y. Shimizu, H. Murakami and S. Miyazaki, ﾒMultiple-Step Electron Charging in Si Quantum-Dot Floating Gate MOS Memoriesﾓ, Jpn. J. Appl. Phys. 42 (2003) 4134-4137.
3. Y. Darma, R. Takaoka, H. Murakami and S. Miyazaki , ﾒSelf-assembling Formation of Silicon Quantum Dots with a Germanium Core by Low-Pressure Chemical Vapor Depositionﾓ, Nanotechnology 14 (2002) 413-415.
4. K. Takeuchi, H. Murakami and S. Miyazaki, ﾒElectronic Charging State of Si Quantum Dots formed on Ultrathin SiO2 as Evaluated by AFM/Kelvin Probe Methodﾓ, Proc. of ECS Intern. Smicond. Technol. Conf. (2002) 1-8.
5. Y. Hirano, F. Sato, N. Saito, M. Abe, S. Miyazaki and M. Hirose, ﾒPhotoconductive Properties of Nanometer-Sized Si Dot Multilayersﾓ, Appl. Phys. Lett. 79 (2001) 2255-2257.
6. S. Miyazaki, M. Ikeda, E. Yoshida, N. Shimizu and M. Hirose, ﾒ Nucleation Site Control in Self-Assembling of Si Quantum Dots on Ultrathin SiO2/c-Siﾓ Springer Proc. in Phys. 87: Proc. of 25th Intern. Conf. on the Phys. of Semicond. Vol. 19(6) (2001) 373-374
7. A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki and M. Hirose, ﾒMemory Operation of Silicon Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Field-Effect Transistorsﾓ, Jpn. J. Appl. Phys. 40 (2001) L721-L723.
8. S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda and M. Hirose, ﾒControl of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Depositionﾓ, Thin Solid Films 369 (2000) 55-59.
9. Y. Hirano, F. Sato, N. Saito, M. Abe, S. Miyazaki and M. Hirose, ﾒFabrication of Nanometer Sized Si dot Multilayers and Their Photoluminescence Propertiesﾓ, J. Non-Cryst. Solids 266-269 (2000) 1004-1008.
10. N. Shimizu, M. Ikeda, E. Yoshida, S. Miyazaki and M. Hirose, ﾒCharging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Techniqueﾓ, Jpn. J. Appl. Phys. 39 (2000) 2318-2320.
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