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Profile
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Name and Affiliation
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Seiichiro Higashi
sehigahiroshima-u.ac.jp
Hiroshima University, Graduate School of Advanced Science of Matter
Department of Electrical Engineering
Associate Professor
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Education and Professional Background
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1989 .3.
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B. S. received from Kyusyu University, Department of Physics
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1991.3.
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M. S. received from Kyusyu University, Graduate School of High Energy Engineering Science
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1991.4.
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Visiting Researcher at University of California Los Angeles, Department of Physics
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1992.4.
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Joined Seiko Epson Corporation, R&D division
Sep. 2001 ph. D received from Tokyo University of Agriculture and Technology
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2001.9.
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ph. D received from Tokyo University of Agriculture
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2003.4.
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Associate Professor at Hiroshima University
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Academic Societies
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Japan Society of Applied Physics
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World Class Research Results
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In-situ observation of extremely short period melting and crystallization process of Si thin film induced by excimer laser irradiation.
Reduction of defects in polycrystalline Si film using oxygen plasma.
Low temperature formation of high-quality SiO2/Si interface using ECR plasma CVD.
Development of high-performance polycrystalline Si thin-film transistor using defect reduction process technologies.
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Pioneering Research Results
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Development of low temperature process technologies and their application to process integration for high-performance polycrystalline Si thin-film transistor fabrication.
(Invited talks:Electrochemical Society 2000, 2001 MRS Spring Meeting, other 2 meetings)
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Industrial and Nation-wide Cooperation
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Seiko Epson Corp. (from f.y. 2003)
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Important Publications
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1.
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S. Higashi, D. Abe,
Y. Hiroshima, K.
Miyashita, T. Kawamura,
S. Inoue and T. Shimoda:
メHigh-Quality SiO2/Si
Interface Formation and
Its Application to
Fabrication of
Low-Temperature-Processed
Polycrystalline Si
Thin-Film Transistorモ
Jpn. J. Appl. Phys., 41,
pp. 3646-3650
(2002).
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2.ハ
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S. Higashi, D. Abe,
Y. Hiroshima, K.
Miyashita, T. Kawamura,
S. Inoue and T. Shimoda:
メDevelopment of
High-Performance
Polycrystalline Silicon
Thin-Film Transistors
(TFTs) Using Defect
Control Process
Technologiesモ IEEE
Electron Device Lett.,
23, pp. 407-409
(2002).
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3.
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S. Higashi and T.
Sameshima:
メPulsed-Laser-Induced
Microcrystallization and
Amorphization of Silicon
Thin Filmsモ Jpn. J.
Appl. Phys., 40, (2001)
pp. 480-485.
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4.
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S. Higashi, D. Abe,
S. Inoue and T. Shimoda:
メLow Temperature
Formation of Device
Quality SiO2/Si
Interfaces Using
Electron Cyclotron
Resonance Plasma
Enhanced Chemical Vapor
Depositionモ Jpn. J.
Appl. Phys., 40, (2001)
pp. 4171-4175.
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5.
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S. Higashi, N. Andoh,
K. Kamisako and T.
Sameshima: メStress in
Pulsed-Laser
Crystallized Silicon
Filmsモ Jpn. J. Appl.
Phys., 40, (2001) pp.
731-735.
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6.
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Y. Tsunoda, T.
Sameshima and S.
Higashi: メImprovement of
Electrical Properties of
Pulsed Laser
Crystallized Silicon
Films by Oxygen Plasma
Treatmentモ Jpn. J. Appl.
Phys., 39, (2000)
pp.1656-1659.
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7.
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S. Higashi, K. Ozaki,
K. Sakamoto, Y. Kano and
T. Sameshima:
メElectrical Properties
of Pulsed Laser
Crystallized Lightly
Doped Polycrystalline
Silicon Filmsモ Jpn. J.
Appl. Phys., 38, (1999)
L857-L860.
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Laboratory Page
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http://home.hiroshima-u.ac.jp/semicon/ |
Personal Page |
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