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Profile |
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Name and Affiliation |
Shin Yokoyama
yokoyamasxsys.hiroshima-u.ac.jp
Professor and Dr. of Engineering
Research Center for Nano-devices and Systems,
Hiroshima University
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Education and Professional Background |
1976. 3 . |
Received B.E. from Faculty of Engineering , Hiroshima University (major: Electronics Course) |
1978. 3 . |
Received M.E. from Faculty of Engineering, Hiroshima University (major: Electric Engineering Course) |
1981. 3 . |
Received Doctor of Engineering from Faculty of Engineering, Hiroshima University (major: Materials Engineering Course) |
1981. 4. |
Research Associate, Faculty of Engineering, Hiroshima University |
1982. 4.
~1983.3 . |
Visiting Scientist of IBM Watson Research Center, New York |
1984. 11 . |
Lecturer, Institute of Materials Science, University of Tsukuba |
1989. 8 . |
Associate Professor, Institute of Materials Science, University of Tsukuba |
1989. 11 . |
Associate Professor, Research Center for Integrated Systems, Hiroshima University |
1994. 5 . |
Professor, Research Center for Integrated Systems, Hiroshima University
1996. 5 Professor, Research Center for Nanodevices and Systems, Hiroshima University (Organization is changed)
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1998. 5 . |
Concurrent with Graduate School of Advanced Sciences of Matter, Hiroshima University |
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Academic Societies |
The Japan Society of Applied Physics
The Institute of Electronics formation and
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World Class Research Results |
・Development of atomic layer deposition of silicon nitride
(Invited talk at the 4th International Conference on Electronic Materials, 1998)
・Technical Meeting of fabrication technology of optoelectronic integrated circuits
(Invited talk at 1995 Intern. Res. Workshop on Future Information Processing Tech.)
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Contribution to Industrial World |
Development of wafer boxes with cleaning unit and its evaluation using MOS devices |
Industrial and Nation-wide Cooperation |
Japan side representative of メ1994 Japan-USA cooperative study on design and fabrication of optoelectronc integrated circuits~ |
Important Publications |
1. |
H. Goto,
K. Shibahara and S. Yokoyama, "Atomic Layer
Controlled Deposition of Silicon Nitride with
Self-limiting Mechanism": Applied Physics
Letters 68, No. 23, pp. 3257-3259 (1996). |
2. |
S. Yokoyama, J. Oogi,
D. Yui and M. Kawabe, "Low-Temperature Selective
Growth of GaAs by Alternately Supplying Molecular
Beam Epitaxy": J. Cryst. Growth 95, No.
1-4 pp. 32-34 (1989). |
3. |
S. Yokoyama, Y. Yamakage
and M. Hirose, "Laser-Induced Photochemical
Etching of SiO2 Studied by X-Ray Photoelectron
Spectroscopy": Appl. Phys. Lett. 47, No.
4 pp. 389-391 (1985). |
4. |
S. Yokoyama, D.W. Dong,
D.J. DiMaria and S.K. Lai, "Characterization
of Plasma-Enhanced Chemically-Vapor-Deposited
Silicon-Rich Silicon Dioxide/Thermal Silicon
Dioxide Dual Dielectric System": J. Appl.
Phys. 54, No. 12 pp. 7058-7065 (1983). |
5. |
S. Yokoyama, M. Hirose
and Y. Osaka, "Electron Spin Resonance in
Discharge-Produced Silicon Nitride": Jpn.
J. Appl. Phys. 20, No. 1 pp. L35-L37 (1981). |
6. |
S. Yokoyama, N. Kajihara,
M. Hirose, Y. Osaka, T. Yoshihara and H. Abe, "Characterization
of Plasma-Deposited Silicon Nitride Films":
J. Appl. Phys. 51, No. 10 pp. 5470-5474 (1980). |
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