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Name and Affiliation
Shin Yokoyama
yokoyama@sxsys.hiroshima-u.ac.jp

Professor and Dr. of Engineering
Research Center for Nano-devices and Systems,
Hiroshima University
Education and Professional Background
1976. 3 . Received B.E. from Faculty of Engineering , Hiroshima University (major: Electronics Course)
1978. 3 . Received M.E. from Faculty of Engineering, Hiroshima University (major: Electric Engineering Course)
1981. 3 . Received Doctor of Engineering from Faculty of Engineering, Hiroshima University (major: Materials Engineering Course)
1981. 4. Research Associate, Faculty of Engineering, Hiroshima University
1982. 4.
~1983.3 .
Visiting Scientist of IBM Watson Research Center, New York
1984. 11 . Lecturer, Institute of Materials Science, University of Tsukuba
1989. 8 . Associate Professor, Institute of Materials Science, University of Tsukuba
1989. 11 . Associate Professor, Research Center for Integrated Systems, Hiroshima University
1994. 5 . Professor, Research Center for Integrated Systems, Hiroshima University
1996. 5 Professor, Research Center for Nanodevices and Systems, Hiroshima University (Organization is changed)
1998. 5 . Concurrent with Graduate School of Advanced Sciences of Matter, Hiroshima University
Academic Societies The Japan Society of Applied Physics
The Institute of Electronics formation and
World Class Research Results ・Development of atomic layer deposition of silicon nitride
(Invited talk at the 4th International Conference on Electronic Materials, 1998)
・Technical Meeting of fabrication technology of optoelectronic integrated circuits
(Invited talk at 1995 Intern. Res. Workshop on Future Information Processing Tech.)
Contribution to Industrial World Development of wafer boxes with cleaning unit and its evaluation using MOS devices
Industrial and Nation-wide Cooperation Japan side representative of メ1994 Japan-USA cooperative study on design and fabrication of optoelectronc integrated circuits~
Important Publications
1. H. Goto, K. Shibahara and S. Yokoyama, "Atomic Layer Controlled Deposition of Silicon Nitride with Self-limiting Mechanism": Applied Physics Letters 68, No. 23, pp. 3257-3259 (1996).
2.  S. Yokoyama, J. Oogi, D. Yui and M. Kawabe, "Low-Temperature Selective Growth of GaAs by Alternately Supplying Molecular Beam Epitaxy": J. Cryst. Growth 95, No. 1-4 pp. 32-34 (1989).
3. S. Yokoyama, Y. Yamakage and M. Hirose, "Laser-Induced Photochemical Etching of SiO2 Studied by X-Ray Photoelectron Spectroscopy": Appl. Phys. Lett. 47, No. 4 pp. 389-391 (1985).
4. S. Yokoyama, D.W. Dong, D.J. DiMaria and S.K. Lai, "Characterization of Plasma-Enhanced Chemically-Vapor-Deposited Silicon-Rich Silicon Dioxide/Thermal Silicon Dioxide Dual Dielectric System": J. Appl. Phys. 54, No. 12 pp. 7058-7065 (1983).
5. S. Yokoyama, M. Hirose and Y. Osaka, "Electron Spin Resonance in Discharge-Produced Silicon Nitride": Jpn. J. Appl. Phys. 20, No. 1 pp. L35-L37 (1981).
6. S. Yokoyama, N. Kajihara, M. Hirose, Y. Osaka, T. Yoshihara and H. Abe, "Characterization of Plasma-Deposited Silicon Nitride Films": J. Appl. Phys. 51, No. 10 pp. 5470-5474 (1980).
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