| 主な発表論文名 |
| 1. |
A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki and M. Hirose "Memory Operation of Silicon Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Field-Effect Transistors" Jpn. J. Appl. Phys. Vol. 40 No. 7B (2001)pp. L721-L723. |
| 2. |
M. Koh, W. Mizubayashi, K. Iwamoto, H. Murakami, T. Ono, M. Tsuno, T. Mihara, K. Shibahara, S. Miyazaki and M. Hirose "Limit of Gate Oxide Thickness Scaling in MOSFETs due to Apparent Threshold Voltage Fluctuation Induced by Tunnel Leakage Current" IEEE Trans. on Electron Devices Vol. 48 No. 2 (2001)pp. 259-264. |
| 3. |
H. Murakami, W. Mizubayashi, H. Yokoi, A. Suyama and S. Miyazaki "Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation" Inter. Conf. on Solid State Devices and Materials (Nagoya, Sept. 17-19, 2002) pp. 712-713. |
| 4. |
H. Murakami, T. Mihara, S. Miyazaki and M. Hirose "Carrier Depletion Effect in the n+Poly-Si Gate Side-Wall/SiO2 Interfaces as Evaluated by Gate Tunnel Leakage Current" Jpn. J. Appl. Phys. Vol. 41 No. 5A (2002)pp. L512-L514. |
| 5. |
A. Suyama, H. Yokoi, M. Narasaki, W. Mizubayashi, H. Murakami and S. Miyazaki "Photoemission Technical Meeting of Aluminum Oxynitride/Si(100) Heterostructures-Chemical Bonding Features and Energy Band Lineup" Inter. Conf. on Solid State Devices and Materials (Nagoya, Sept. 17-19, 2002) pp.760-761. |
| 6. |
Y. Darma, H. Murakami and S. Miyazaki "Formation of Nanometer Silicon Dots with Germanium Core by Highly-Slective Low-Pressure Chemical Vapor Deposition" Jpn. J. Appl. Phys. Vol. 42 No. 6Ｂ (2003)pp. 4129-4133. |
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