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主な発表論文名
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1.
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S. Higashi, D. Abe,
Y. Hiroshima, K.
Miyashita, T. Kawamura,
S. Inoue and T. Shimoda:
ﾒHigh-Quality SiO2/Si
Interface Formation and
Its Application to
Fabrication of
Low-Temperature-Processed
Polycrystalline Si
Thin-Film Transistor ﾓ
Jpn. J. Appl. Phys., 41,
pp. 3646-3650
(2002).
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2. ﾊ
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S. Higashi, D. Abe,
Y. Hiroshima, K.
Miyashita, T. Kawamura,
S. Inoue and T. Shimoda:
ﾒDevelopment of
High-Performance
Polycrystalline Silicon
Thin-Film Transistors
(TFTs) Using Defect
Control Process
Technologies ﾓ IEEE
Electron Device Lett.,
23, pp. 407-409
(2002).
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3.
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S. Higashi and T.
Sameshima:
ﾒPulsed-Laser-Induced
Microcrystallization and
Amorphization of Silicon
Thin Films ﾓ Jpn. J.
Appl. Phys., 40, (2001)
pp. 480-485.
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4.
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S. Higashi, D. Abe,
S. Inoue and T. Shimoda:
ﾒLow Temperature
Formation of Device
Quality SiO2/Si
Interfaces Using
Electron Cyclotron
Resonance Plasma
Enhanced Chemical Vapor
Deposition ﾓ Jpn. J.
Appl. Phys., 40, (2001)
pp. 4171-4175.
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5.
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S. Higashi, N. Andoh,
K. Kamisako and T.
Sameshima: ﾒStress in
Pulsed-Laser
Crystallized Silicon
Films ﾓ Jpn. J. Appl.
Phys., 40, (2001) pp.
731-735.
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6.
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Y. Tsunoda, T.
Sameshima and S.
Higashi: ﾒImprovement of
Electrical Properties of
Pulsed Laser
Crystallized Silicon
Films by Oxygen Plasma
Treatment ﾓ Jpn. J. Appl.
Phys., 39, (2000)
pp.1656-1659.
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7.
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S. Higashi, K. Ozaki,
K. Sakamoto, Y. Kano and
T. Sameshima:
ﾒElectrical Properties
of Pulsed Laser
Crystallized Lightly
Doped Polycrystalline
Silicon Films ﾓ Jpn. J.
Appl. Phys., 38, (1999)
L857-L860.
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COEメンバー
hiroshima-u.ac.jp