主な発表論文名 |
1. |
K. Shibahara,
“Ultra-Shallow Jucntion Formation with Antimony
Implantation” (Invited Paper), IEICE Trans. Electron.,
Vol. E85-C, 97 (2002), pp. 1091-10,. |
2. |
D. Notsu, N. Ikechi,
Y. Aoki, N. Kawakami and K. Shibahara , “Fabrication
of 100 nm width Fine Active-Region Using LOCOS
Isolation”, IEICE Trans. Electron., Vol. E85-C,
(2002), pp. 1119-1123. |
3. |
T. Amada, N. Maeda,
and K. Shibahara , “Degradation in a Molybdenum-Gate
MOS Structure Caused by N+ Ion Implantation for
Work Function Control”, Mat. Res. Soc. Symp.
Proc., vol. 716, (2002), pp.B7.5.1-B7.5.6. |
4. |
M. Koh, W. Mizubayashi,
K. Iwamoto, H. Murakami, T. Ono, M. Tsuno, T.
Mihara, K. Shibahara, S. Miyazaki and M. Hirose,
“Limit of Gate Oxide Thickness Scaling in MOSFETs
due to Apparent Threshold Voltage Fluctuation
Induced by Tunnel Leakage Current”, IEEE Trans.
Electron Devices, Vol. 48 No. 2, (2001), pp.
259-264. |
5. |
K. Shibahara, K. Egusa
and K. Kamesaki and H. Furumoto, “Improvement
in Antimony-Doped Ultra Shallow Junction Sheet
Resistance by Dopant Pileup Reduction at the
SiO2/Si Interface”, Jpn. J.
Appl. Phys. Vol. 39, (2000), pp. 2194-2197. |
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