主な発表論文名 |
1. |
A. Nakajima,
Y. Sugita, K. Kawamura, H. Tomita, and N. Yokoyama, "Si
quantum dot formation with
low-pressure chemical vapor deposition," Jpn.
J. Appl. Phys. Vol. 35, Part 2, No.2B, pp. L189-L191
(1996). (21回) |
2. |
A. Nakajima, T. Futatsugi,
K. Kosemura, T. Fukano, and N. Yokoyama, " Room
temperature operation of Si single-electron memory
with self-aligned floating dot gate," Appl.
Phys. Lett. Vol. 70, No.13, pp. 1742-1744 (1997).
(80回) |
3. |
A. Nakajima, Q.D.M.
Khosru, T. Yoshimoto, and S. Yokoyama, "Atomic-layer-deposited
silicon-
nitride/SiO2 stack ---- a highly potential gate
dielectrics for advanced CMOS technology,"
Microelectronics Reliability Vol. 42, pp.1823-1835
(2002) (Introductory Invited). |
4. |
A. Nakajima, T. Itakura,
S. Watanabe, and N. Nakayama, "Photoluminescence
of porous Si, oxidized then deoxidized chemically," Appl.
Phys. Lett. Vol. 61, No. 1, pp. 46-48 (1992).
(75回) |
5. |
T. Suemoto, K. Tanaka,
A. Nakajima, and T. Itakura, "Observation
of phonon structures in porous Si
luminescence," Phys. Rev. Lett. Vol. 70, No.23, pp. 3659-3662 (1993). (89回) |
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(被引用回数、2003年3月現在 文部科学省 国立情報学研究所のデータベース) |
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